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RSQ015N06
Nch 60V 1.5A Power MOSFET
l Outline
Datasheet
V DSS
R DS(on) (Max.)
60V
290m W
TSMT6
(6)
(5)
(4)
I D
1.5A
(1)
P D
1.25W
(2)
(3)
l Features
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
l Inner circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
* 1 ESD PROTECTION DIODE
* 2 BODY DIODE
l Packaging specifications
Packaging
Taping
l Application
Reel size (mm)
180
DC/DC converters
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
8
3,000
TR
PX
l Absolute maximum ratings (T a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
1/11
Symbol
V DSS
I D *1
I D,pulse *2
V GSS
P D *3
P D *4
T j
T stg
Value
60
? 1.5
? 6
? 20
1.25
0.6
150
- 55 to +150
Unit
V
A
A
V
W
W
°C
°C
2012.06 - Rev.B
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